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ABB 3BHE019719R0101 GVC736BE101 – High-Power InGaN Gate-Commutated Thyristor Module

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The ABB 3BHE019719R0101 GVC736BE101 is a high-power InGaN Gate-Commutated Thyristor (IGCT) module designed for applications requiring high-efficiency power conversion in industrial control systems.

Operating Voltage:220 V

Output Frequency:30 kHz

Certified Product:Yes

Series:GVC736BE101

Material Coding:3BHE019719R0101

Brand:ABB

    The ABB 3BHE019719R0101 GVC736BE101 IGCT Module is a prime example of advanced engineering in industrial power conversion systems. Designed for applications where reliability and efficiency are paramount, this module boasts superior performance capabilities.

    Crafted with precision, this module is built using high-grade materials that withstand extreme operating environments, ensuring longevity and minimal maintenance requirements. Its robust construction allows it to deliver consistent performance even under the most challenging conditions.

    Equipped with state-of-the-art technology, the GVC736BE101 IGCT Module offers unparalleled power conversion efficiency. This not only optimizes energy usage but also reduces operational costs, making it an ideal choice for industries aiming to enhance sustainability and reduce environmental impact.

    Easy to integrate into existing systems, the module supports seamless setup and quick deployment, saving time and resources during installation. A comprehensive set of diagnostics tools comes included, providing real-time monitoring and predictive maintenance capabilities.

    At the heart of its design lies a commitment to innovation and customer satisfaction. ABB‘s expertise in power electronics ensures that the GVC736BE101 IGCT Module meets the highest standards in terms of quality and reliability, backed by extensive testing and validation processes.

ABB 3BHE019719R0101 GVC736BE101 IGCT Module




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